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July 2020

Siemens’ Acquisition of UltraSoC Shakes Up EDA / SIP Markets

Rich Wawrzyniak's picture
published by Rich Wawrzyniak on Thu, 2020-07-23 21:37

On June 23rd, 2020, Siemens AG signed a letter of intent to acquire Cambridge, UK-based 3rd Party Semiconductor Intellectual Property (SIP) vendor, UltraSoC. Terms of the transaction were not disclosed except to say Siemens plans to integrate UltraSoC’s technology into the Xcelerator portfolio as part of Mentor’s Tessent™ software product suite. The acquisition is expected to close in Siemens 4th fiscal quarter this year.
 
There are several areas where this acquisition is impactful to the SIP market, the EDA market and the broader semiconductor market.
 
SIP Market Impacts:
 

Semico Wafer Demand: Q2 2020 Highlights

The Wafer Demand Summary and Assumptions is a quarterly publication. It includes an excel spreadsheet with annual wafer demand by product by technology from 2010-2024. Product categories include DRAM, SRAM, NAND, NOR, Other Non-volatile, MPU, MCU, DSP, Computing MOS Logic, Communications MOS Logic, Consumer MOS Logic, Automotive MOS Logic, Other MOS Logic, Programmable Logic, Standard Cell, Gate Array, Analog, Discrete, Optoelectronics, Sensors and Digital Bipolar.

Table of Contents: 
TOC_MA111-20.pdf

May Semiconductor Revenues up 9.0% MoM; Economic Uncertainty Clouds View of 2H 2020, according to Semico IPI Report

May 2020 semiconductor revenues increased 9.0% from April, which was down 14% from March. April's 14.2% drop was the largest sequential decline since 2011, but May's 9.0% increase was the largest for the month of May since 2006. Year-over-year, May was up 6.4% compared to May 2019. The North American PCB book-to-bill ratio fell from 1.19 in April to 1.1 in May. However, anything above one is a positive sign for sales six months out. The ratio has been at 1.0 or higher since May 2019.
 

Shockingly Good: SiC Revenues Reach $3 Billion by 2024, says Semico Research

Silicon Carbide (SiC) is a wide bandgap material and can be used for discrete components such as Schottky diodes and MOSFETs as well as bare die in power modules. Wide bandgap (WBG) refers to materials that permit devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductor materials like silicon and gallium arsenide. It offers many advantages, including higher thermal conductivity that results in more efficient heat transfer and a lower on-state resistance that decreases conduction losses.

SiC: Smaller, Faster, More Efficient

Silicon Carbide (SiC) is a wide bandgap material and can be used for discrete components such as Schottky diodes and MOSFETs as well as bare die in power modules. Wide bandgap (WBG) refers to materials that permit devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductor materials like silicon and gallium arsenide. It offers many advantages, including higher thermal conductivity that results in more efficient heat transfer and a lower on-state resistance that decreases conduction losses.

Table of Contents: 
TOC_MA120-20.pdf

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